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Incoherent Light Recrystallization of Silicon-On-Insulator Films

Published online by Cambridge University Press:  21 February 2011

Mc D. Robinson ,
G. K. Celler  and
D. J. Lischner
Mc D. Robinson
Affiliation:
Epsilon Technology, Inc., Tempe, AZ 85282
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Lischner
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
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Abstract

Energy sources used to convert polycrystalline silicon-on-insulator films to single crystal through melting and recrystallization have included electron beams, lasers, graphite strip heaters, and incoherent light from tungsten halogen and vapor arc lamps. This review focuses on incoherent light recrystallization of polycrystalline silicon; comparing tungsten filament and vapor arc lamp sources, and linear zone melting vs. uniform illumination. The discussion includes material redistribution, defect formation, and the dynamics of melting.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 71
Copyright
Copyright © Materials Research Society 1984

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References

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