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Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability

Published online by Cambridge University Press:  15 February 2011

G. Lucovsky ,
D. R. Lee ,
Z. Jing ,
J. L. Whitten ,
C. Parker  and
J. R. Hauser
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
D. R. Lee
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
Z. Jing
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
J. L. Whitten
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
C. Parker
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
J. R. Hauser
Affiliation:
Departments of Physics, Materials Science and Engineering, Chemistry, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
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Abstract

Incorporation of N-atoms at the Si-Si02 interface in field effect transistors, FETs, with ultrathin dielectrics (≤ 5.5 nm) improves device reliability. Four aspects of our recent research on nitrided Si-Si02 interfaces are discussed in this paper: i) the low-temperature/low-thermal budget process by which interface chemistry is controlled, and optimized; ii) the use of on-line and off-line diagnostics to determine the spatial confinement and concentration of interfacial N-atom incorporation; iii) comparisons of device properties for non-nitrided and nitrided interfaces; and iv) the proposal of an atom-scale model for the role that interfacial N-atoms play in improving device reliability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 321
Copyright
Copyright © Materials Research Society 1996

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References

[1] DiMaria, D. J., Micorelectronic Engineering 28 (1995) 63.Google Scholar
[2] Han, L. K., Bhat, M., Wristers, D., Wang, H. H. and Kwong, D. L., Micorelectronic Engineering 28, 89 (1995).Google Scholar
[3] Green, M., Brasen, D., Evans-Lutterodt, K. W., Feldman, L. C., Krisch, K., Lennard, W., Tang, H.-T., Manchanda, L., and Tang, M.-T., Appl. Phys. Lett. 65, 848 (1994).Google Scholar
[4] Ito, T., Nakamura, T., and Ishikawa, H., IEEE Trans. Electron Devices 29, 498(1982).Google Scholar
[5] Hori, T. and Iwasaki, H., IEEE Electron Device Lett. 10, 195 (1989).Google Scholar
[6] Lo, G. Q. and Kwong, D. L., IEEE Electron Device Letters 12, 175 (1991).Google Scholar
[7] Okadaet, Y. al., IEEE Trans. Electron Devices 41, 191 (1994).Google Scholar
[8] Ma, Y., Yasuda, T., Habermehl, S., and Lucovsky, G., J. Vac. Sci. Technol. B 11, 1533 (1993).Google Scholar
[9] Ma, Y., Yasuda, T., and Lucovsky, G., Appl. Phys. Lett. 64, 2226 (1994).Google Scholar
[10] Hattangady, S. V., Thesis, Ph.D., North Carolina State University, 1995.Google Scholar
[11] Stahlbush, R. E., Cartier, E. and Buchanan, D. A., Micorelectronic Engineering 28, 15 (1995)Google Scholar
[12] Yasuda, T., Ma, Y., Habermel, S. and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).Google Scholar
[13] Lucovsky, G., Wortman, J. J., Yasuda, T., Xu, X-L, Misra, V, Hattangady, S. V., Ma, Y. and Hornung, B., J. Vac. Sci. Technol. B 12, 2839 (1994).Google Scholar
[14] Lee, D. R., Lucovsky, G., Denker, M. S. and Magee, C., J. Vac. Sci. Technol. A13, 607 (1995); D. R. Lee, C. Parker, J. R.Hauser and G. Lucovsky, J. Vac. Sci. Technol. B13, 1788 (1995).Google Scholar
[15] Meyer, C., Liipke, G., Emmerichs, U., Wolter, F., Kurz, H., Bjorkman, C. H. and Lucovsky, G., Phys. Rev. Lett. (1995) 74, 3001.Google Scholar
[16] Shin, H., Yeric, G. M., Tasch, A. F. and Mazier, C. M., Solid State Electron. 34, 545 (1991)Google Scholar
[17] Cartier, E. and Stathis, J. H., Micorelectronic Engineering 28, 3 (1995).Google Scholar
[18] Jing, Z. and Lucovsky, G., J. Vac. Sci. Technol. B 13, 1621 (1995).Google Scholar