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Increase of Hydrogen-Radical Density and Improvement of The Crystalline Volume Fraction of Microcrystalline Silicon Films Prepared by Hot-Wire Assisted Pecvd Method

Published online by Cambridge University Press:  17 March 2011

Norimitsu Yoshida ,
Takashi Itoh ,
Hiroki Inouchi ,
Hidekuni Harada ,
Katsuhiko Inagaki ,
Noriyuki Yamana ,
Kanta Yamamoto ,
Shuichi Nonomura  and
Shoji Nitta
Norimitsu Yoshida
Affiliation:
Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Takashi Itoh
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Hiroki Inouchi
Affiliation:
Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Hidekuni Harada
Affiliation:
Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Katsuhiko Inagaki
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Noriyuki Yamana
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Kanta Yamamoto
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Shuichi Nonomura
Affiliation:
Environmental and Renewable Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
Shoji Nitta
Affiliation:
Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, JAPAN
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Abstract

Higher crystalline Si volume fractions in hydrogenated microcrystalline silicon ( µc-Si:H) films have been achieved by the hot-wire assisted plasma enhanced chemical vapor deposition (HWA-PECVD) method compared with those in films by conventional PECVD. µc-Si:H films can also be prepared by HWA-PECVD under typical conditions used for preparing hydrogenated amorphous silicon (a-Si:H) films by PECVD, in which the hydrogen-dilution ratio (H2 / SiH4) is ∼ 10. The hot wire seems to produce hydrogen radicals. As a result, the HWA- PECVD method can control hydrogen-radical densities in the RF plasma, and this method can also control the ratio of hydrogen coverage at the surface of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A19.3
Copyright
Copyright © Materials Research Society 1999

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References

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