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Influence of Current Injection into a-Sin:H Films on Charge Trapping Defects
Published online by Cambridge University Press: 26 February 2011
Abstract
The degradation mechanism of a-SiN:H films under current injection is investigated. It is shown that the degradation of a-SiN:H films is closely related to the hole trapping into Si-Si, Si-H, and Si0 defects. It is presumably concluded that the hole trapping centers are the Si-Si defects in the valence band tail. We estimate that the hole trapping cross-section is nearly equal to 10−20cm2.
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- Copyright © Materials Research Society 1991