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Influence of Dislocations on the I-V Characteristics of Silicon Solar Cells

Published online by Cambridge University Press:  26 February 2011

Robert Murphy ,
Bhushan L. Sopori  and
Doug Rose
Robert Murphy
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
Bhushan L. Sopori
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
Doug Rose
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
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Abstract

This paper presents a phenomenological approach for analysis of dislocations in a large-area device like a solar cell. A microscopic model of a dislocation is used to calculate the local effects of a dislocation on the dark and the illuminated characteristics of a p-n junction device. A statistical approach is then used to empirically arrive at the I-V characteristics of a small-area device with a uniform distribution of dislocations. Finally, these results are applied to develop a network model to determine the terminal characteristics of a large-area solar cell of a known spatial distribution of dislocations. We show that the performance of a solar cell is influenced not only by the density of dislocations but also by their spatial distribution; heavily dislocated regions exert a disproportionately large degradation effect on the device characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 749
Copyright
Copyright © Materials Research Society 1995

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