Hostname: page-component-7479d7b7d-q6k6v Total loading time: 0 Render date: 2024-07-11T05:29:29.191Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Forced Diffusion of Boron on Electrical Conductivity of Diamond Films

Published online by Cambridge University Press:  15 February 2011

T. Sung ,
G. Popovici ,
M. A. Prelas ,
R. G. Wilson ,
Kim Bigelow ,
J. Chacon  and
S. K. Loyalka
T. Sung
Affiliation:
Nuclear Engineering Dept., University of Missouri-Columbia, Columbia, MO, 65211.
G. Popovici
Affiliation:
Nuclear Engineering Dept., University of Missouri-Columbia, Columbia, MO, 65211.
M. A. Prelas
Affiliation:
Nuclear Engineering Dept., University of Missouri-Columbia, Columbia, MO, 65211.
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265.
Kim Bigelow
Affiliation:
Norton Diamond Film, Northgboro, MA, 01532.
J. Chacon
Affiliation:
Nuclear Engineering Dept., University of Missouri-Columbia, Columbia, MO, 65211.
S. K. Loyalka
Affiliation:
Nuclear Engineering Dept., University of Missouri-Columbia, Columbia, MO, 65211.
Get access

Abstract

Four CVD diamond films grown on tungsten carbide were used for diffusion. Diffusion was performed in a hydrogen atmosphere. Three methods of diffusion were used: conventional diffusion due to concentration gradient, forced diffusion under a dc electric bias with thermal ionization and forced diffusion with optical and thermal ionization of boron acceptor level in diamond. The temperature dependence of the electrical conductivity of the diffused samples was measured in the temperature range 300–600 K. The increase of approximately six order of magnitude in conductivity of the films doped by forced diffusion was obtained. The samples diffused with boron by conventional diffusion due to concentration gradient showed only one order of magnitude increase in electrical conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 649
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Spitsyn, B. V. and Alexenko, A. E., in: Proc. 2nd Int. Symp. on Diamond Materials, v. 91– eds. Purdes, A. J., Angus, J. C., Davis, R. F., Meyerson, B. M., Spear, K. E. and Yoder, M. (Electrochemical Society Proceedings, 1991, Pennington), 597ndash;603.Google Scholar
2. Okano, K., Akiba, Y., Kurosu, T., lida, M., and Nakamura, T., Journal of Crystal Growth, 1990, v.99, 1192–1195.Google Scholar
3. Vavilov, V. S., Gukasyan, M. A., Guseva, M. I. and Konorva, E. A., Soviet Phys. Semicond. 1972, 6, 741.Google Scholar
4. Densienko, A. V., Melnikov, A. A., Zaitsev, A. M., Kurganski, V. I., Shilov, A. J., Ju. Gorban, P. and Varichenko, V. S., Materials science and Engineering, 1992, B 11,273ndash;1277.Google Scholar
5. Tasi, W., Delifino, M., Hodul, D., Riaziat, M., Ching, L. Y., Reynold, G., and Cooper, C. B., IEEE Electron Device Letters, 1991, v. 12, n. 4, 157–159.Google Scholar
6. Popovici, Galina, Sung, T., Khasawinah, S., Prelas, M. A. and Wilson, W. G., J. Appl. Phys., 1995, v. 77, 5625–5629.Google Scholar
7. Muto, Y., Sugino, T., and Shirafuji, J. and Kobashi, K., Appl. Phys. Lett. 1991, 59, (7), 843–845 Google Scholar
8. Huang, Bohr-ran and Reinhard, D. K., Appl. Phys. Lett. 1991, 59, (12) 1494–1496.Google Scholar