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Influence of Hcl and H2 on the Heteroepitaxial Growth of 3C-SiC Films on Si(100) Via Low-Temperature Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506–5102
Y. Gao
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS 66506–5102
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Abstract

The roles of HCl and H2 on the low temperature epitaxial growth of 3C-SiC on Si (100) in the SiH4-C2H-HCl-H2 system were examined. At a deposition temperature of 1000 °C with pure H2 as the carrier gas, the deposition rate decreased by approximately 70%, and the structure of the films changed from randomly oriented polycrystals, to textured polycrystals, to single crystals as the Cl/Si gas input ratio was increased from 0 to 40. Without any HCl present, the deposition rate did not change when the H2 carrier gas was replaced with up to 75% He. With a Cl/Si input ratio of 40, the growth rate decreased by approximately 70% as the He fraction was increased to 75%. Films deposited without HCl became more textured as H2 was replaced with He, and single crystal films were produce with a 75% He - 25% H2 mixture as the carrier gas. In contrast, with an input Cl/Si ratio of 40, all films were single crystal, but the rocking curve FWHM increased as H2 was replaced with He.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Tairov, I. M. and Vodakov, Y. A. in Electroluminescence, edited by Pankove, J. I., Springer-Verlag, New York, 1977, p. 31.Google Scholar
2. Davis, R. F. and Glass, J. T., Adv. Solid-State Chem. 2, p. 1 (1991).Google Scholar
3. Davis, R. F., Kelner, G., Shur, M., Palmour, J. W., and Edmond, J. A., IEEE Proc. 79, p. 677 (1991).Google Scholar
4. Edgar, J. H., J. Mater. Res. 7, p. 235 (1992).Google Scholar
5. Nishino, S., Powell, J. A., and Will, H. A., Appl. Phys. Lett. 42, p. 460 (1983).Google Scholar
6. Glass, J. T., Wang, Y. C., Kong, H. S., and Davis, R. F., Mat. Res. Soc. Symp. Proc. 116, p. 337 (1988).Google Scholar
7. Baranov, I. M., Dmitriev, V. A., Nikitina, I. P., and Kondrateva, T. S. in Amorphous and Crystalline Silicon Carbide IV, edited by Yang, C. Y., Rahman, M. M., Harris, G. L. (Springer Proceedings in Physics, 71, Springer-Verlag Berlin Heidelberg, 1992), p. 116118.Google Scholar
8. Furumura, Y., Doki, M., Mieno, F., Eshita, T., Suzuki, T., and Maeda, M., J. Electrochem. Soc. 135, p. 1255 (1988).Google Scholar
9. Kunstamann, Th. and Veprek, S., Appl. Phys. Lett. 67, p. 3126 (1995).Google Scholar
10. Chaudhry, M.I. and Wright, R.L., J. Mater. Res. 5, p. 1595 (1990).Google Scholar