Hostname: page-component-5c6d5d7d68-thh2z Total loading time: 0 Render date: 2024-08-22T04:30:28.748Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Ion Energy in Plasma Deposition of a-Sio2 Films

Published online by Cambridge University Press:  22 February 2011

L. Vallier ,
O. Joubert ,
R. Burke ,
F. Ferrieu  and
R. A. B. Devine
L. Vallier
Affiliation:
LCP3 UJF-CNRS, France Téécom / CNET
O. Joubert
Affiliation:
LCP3 UJF-CNRS, France Téécom / CNET
R. Burke
Affiliation:
LCP3 UJF-CNRS, France Téécom / CNET
F. Ferrieu
Affiliation:
France Télécom, Centre National d'Etudes des Telecommunications, BP 98, 38243 Meylan Cedex, France
R. A. B. Devine
Affiliation:
France Télécom, Centre National d'Etudes des Telecommunications, BP 98, 38243 Meylan Cedex, France
Get access

Abstract

Silicon dioxide films have been deposited using a microwave plasma of (SiH4 + O2) excited by distributed electron cyclotron resonance. The ratio of flow rates of the reactive gas was (O2: SiH4) = 7 and no intentional substrate heating was used. The effect of ion energy during deposition, in the 10 — 150 eV range, has been studied through refractive index, infrared absorption bands, chemical etch rate and electrical measurements. It is found that for an ion energy > 50 eV, many of the film characteristics are close to those of thermal SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 193
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nguyen, S.V. and Albaught, K., J. Electrochem. Soc., 136, 2835 (1989).Google Scholar
2. Matsuo, S. and Kiuchi, M., Jpn. J. Appl. Phys., 22, 210 (1983).Google Scholar
3. Herak, T.V., Chan, T.T., Thomson, D.J., Mejia, S.R., Buchanan, D.A. and Kao, K.C., J. Appl. Phys., 65, 2457 (1989).Google Scholar
4. Plais, F., Agius, B., Abel, F., Siejka, J., Puech, M., Ravel, G., Alnot, P. and Proust, N., J. Electrochem. Soc., 139, 1489 (1992).Google Scholar
5. Burke, R., Pelletier, J., Pomot, C. and Vallier, L., J. Vac. Sci. Technol., A8, 2931 (1990).Google Scholar
6. Burke, R., Guillermet, M., Vallier, L. and Voisin, E. in Processing and Characterization of Materials Using Ion Beams, edited by Rehn, L.E., Greene, J. and Smidt, F.A. (Mater. Res. Soc. Proc. 128, Pittsburgh, PA, 1989) pp.291–296.Google Scholar
7. Pichot, M., Durandet, A., Pelletier, J., Arnal, Y. and Vallier, L., Rev. Sci. Instrum., 57, 1072 (1988).Google Scholar
8. Lucovsky, G., Martini, M.J., Srivastava, J.K. and Irene, E.A., J. Vac. Sci. Technol., B5, 530 (1987).Google Scholar
9. Devine, R.A.B., Transactions of the Mat. Res. Soc. Japan Vol. 8, 165, (1992).Google Scholar
10. Devine, R.A.B., Jap. Journal of Appl. Physics, in press.Google Scholar