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The Influence of Local Magnetization on Transport in Cd0.91Mn0.09Te:In

Published online by Cambridge University Press:  15 February 2011

S. Von Molnar ,
T. Penney ,
I. Terry  and
P. Becla
S. Von Molnar
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
T. Penney
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598
I. Terry
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598 Department of Physics, University of Durham, Science Laboratories, South Road, Durham, DH1 3LE, UK
P. Becla
Affiliation:
MIT Bitter National Magnet Lab., Cambridge, MA. 02139
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Abstract

We describe the influence of local magnetization on electron localization and transport properties on the insulating side of the metal insulator transition in the dilute magnetic persistent photoconductor Cd0.091 Mn0.09Te:ln. Measurements of both the temperature dependence of the transport properties, and also the dielectric constant, are reported for just one sample in which the carrier concentration n was varied by photodoping. From these results we are able to extract the carrier concentration dependence of the localization length and the permitivity of the electrons. We also report onl a new transport effect which occurs at ultra low temperatures and/or carrier concentrations very close to the metal insulator transition. We find that this mechanism is totally magnetic in origin and are able to explain it in terms of the well devewloped ideas of magnetic polarons in magnetic semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 290: Symposium N – Dynamics in Small Confining Systems , 1992 , 335
Copyright
Copyright © Materials Research Society 1993

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References

1. Molnar, S. von, and Penney, T., Localization and Metal-insulator Transition, eds. Fritzsche, H. and Adler, D.,(Plenum Press,New York,1985) p. 183–199.Google Scholar
2. von Molncr, S., Terry, I., Becla, P., Penney, T., and McElfresh, M. W., Localization 1990, Inst. Phys. Conf. Ser., 108, 29 (1990)).Google Scholar
3. Terry, I., von Molnár, S., Torressen, A. M., and Becla, P., Phil. Mag. B, 65, 1245 (1992).Google Scholar
4. Terry, I., Penney, T., and Molnár, S. von, and Becla, P., Phys. Rev. Lett. 69 1800 (1992).Google Scholar
5. Terry, I., Penney, T., Molnár, S. von, Rigotty, I. and Becla, P., Solid State Com. 84 235 (1992).Google Scholar
6. Wojtowicz, T., Yang, G. L., Klosowski, P., Dobrowolska, M., Furdyna, J. K. and Miotowski, I., 1990 Bull. APS 35 663. for the related system CdMn(S,Se):ln.Google Scholar
7. Mott, N. F., and Davis, E. A., Electronic Processes in Non-Crystalline Materials,2nd Edit., (Clarendon Press,Oxford.1979).Google Scholar
8. Efros, A. L. and Shklovskii, B. I., J. Phys. C 8, L49 (1975).Google Scholar
9. Shklovskii, B. I. and Efros, A. L., Electronic Properties of Doped Semiconductors, Springer Series in Solid State Sciences Vol.45 (Springer-Verlag, Berlin, 1984), pp. 202–208 and 228–240.Google Scholar
10. Aleshin, A. N., lonov, A. N., Parfenev, R. V., Shlimak, I. S., Heinrich, A., Schumann, J., and Elefant, D., Fiz. Tverd. Tela (Leningrad) 30, 696 (1988); A. N. Aleshin, A. V. Suvorowv, I. S. Shlimark, A. F. Ioffe and A. V. Dobrodumov, Solid State Commun. 71, 85 (1989); A. N. lonov and I. S. Shlimak in Hopping Transport in Solids, ed. (M. Pollak and B. Shklovskii, Elsevier, New York, 1991), p. 397.Google Scholar
11. Dai, P., Zhang, Y. and Sarachik, M. P., Phys. Rev. Lett. 69, 1304 (1992).Google Scholar
12. Burkey, B. C., Khosla, R. P., Fischer, J. R., and Losee, D. L., J. App. Phys. 147, 1095 (1976).Google Scholar
13. Khatchaturyan, K., Kaminska, M., Weber, E. R., Becla, P. and Street, R. A., Phys. Rev. B 40, 6304 (1989).Google Scholar
14. Iseler, G. W., Kaflas, J. A., Strauss, A. J., MacMillan, H. F. and Bube, R. H., Sol. Stat. Com. 10, 619 (1972).Google Scholar
15. Theis, T. N., Mooney, P. M. and Parker, B. D., J. Electron Mater. 20, 35 (1991), and references therein.Google Scholar
16. Katsumoto, S., Komori, F., Jano, N. and Kobayashi, S.. J. Phys. Soc. Jpn. 56, 2259 (1987).Google Scholar
17. Shapira, Y., Oliveira, N. F. Jr., Ridgley, D. H., Kershaw, R., Dwight, K. and Wold, A., Phys. Rev. B34, 508 (1986).Google Scholar
18. Castner, T. G., Lee, N. K., Cieloszyk, G. S.. and Salinger, G. L., Phys. Rev. Lett. 34, 1627 (1975).Google Scholar
19. Chicon, R., Ortuno, M., and Pollak, M., Phys. Rev. B 37, 10520 (1988); R. Chicon, M. Ortuno, B. Hadley, and M. Pollak, Philos, Mag. B58, 69 (1987).Google Scholar
20. Kasuya, T. and Yanase, A., Rev. Mod. Phys. 40, 684 (1968).Google Scholar
21. For a recent review, see Wolff, P. A. in Semimagnetic Semiconductors and Diluted Magnetic Semiconductors, ed. by (Averous, M. and Balkanski, M., Plenum Press, New York, 1991) p. 147.Google Scholar