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The Influence of Strengthening Mechanisms on Stress Relaxation in Thin Aluminum Metallization

Published online by Cambridge University Press:  15 February 2011

Jonathan Gorrell ,
Paul Holloway  and
Hal Jerman
Jonathan Gorrell
Affiliation:
Dept. of Materials Science & Engineering, University of Florida 32611–6400
Paul Holloway
Affiliation:
Dept. of Materials Science & Engineering, University of Florida 32611–6400
Hal Jerman
Affiliation:
EG&G IC Sensors, 1701 McCarthy Blvd., Milpitas, CA 95035.
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Abstract

With the development of microelectromechanical systems there is a need for stronger aluminum thin films that resist stress relaxation. A number of strengthening mechanisms are used extensively for bulk aluminum alloys, but very few have been used to improve the performance of thin films. Pure aluminum, standard microelectronicsmetallization (A1-.04Cu-.017Si), alloy T201 (Al-.046Cu-.006Ag-.004Mn-.003Mg-.003Ti), and alloy 2090 (Al-.026Cu-.021Li-.001Zr) were electron beam evaporated or sputter deposited onto (100) silicon substrates.. Stress versus temperature and stress relaxation were measured in the films. Pure aluminum and AlSiCu alloy films exhibited plastic deformation at low stresses and low temperatures. The T201 and 2090 films exhibited residual elastic stresses at room temperature of 350 MPa and 500 MPa, and did not plastically deform until 240°C at 100 MPa stress, or 270°C at 200 MPa stress, respectively. The T201 film also showed a low stress relaxation rate. We speculate that solid solution strengthening caused the increase in strength of the T201 film, and that age hardening caused the increase in strength of the 2090 film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 27
Copyright
Copyright © Materials Research Society 1997

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