Hostname: page-component-5c6d5d7d68-vt8vv Total loading time: 0.001 Render date: 2024-08-16T16:22:47.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Infrared Cathodoluminescence Studies from Dislocations in Silicon in tem, a Fourier Transform Spectrometer for Cl in Tem and Els/cl Coincidence Measurements of Lifetimes in Semiconductors

Published online by Cambridge University Press:  26 February 2011

R. J. Graham ,
J.C.H. Spence  and
H. Alexander
R. J. Graham
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287, U.S.A.
J.C.H. Spence
Affiliation:
Department of Physics, Arizona State University, Tempe, Arizona 85287, U.S.A.
H. Alexander
Affiliation:
Physikalischer Institute, Universitat Köln, D-5000 Köln 41, F.R.G.
Get access

Abstract

In this paper we report the first observations by cathodoluminescence in TEM of radiative infrared emission from dislocations in silicon. These results were obtained at 23-25K in a Philips EM400 electron microscope. Our results are interpreted in the light of earlier photoluminescence work, and the prospects for obtaining spectra from a small number of well characterized dislocations with high spatial resolution are reviewed. Preliminary results are also reported showing the infrared band-gap emission spectrum of GaInAs at 90K recorded using a small Fourier Transform Spectrometer fitted to the same electron microscope. Finally, we describe timing coincidence experiments from samples in which only those visible CL photons are counted which arrive at the detector at the same time as the corresponding transmitted electron energy loss event. We describe the use of this technique for life-time mapping in semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 235
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pennycook, S., Ultramicroscopy 7, 99, 1981.Google Scholar
2. Yamamoto, N., Spence, J.C.H. and Fathy, D., Phil. Mag. B49, 609, 1984.Google Scholar
3. Roberts, S.H., Inst. Phys. Conf. Ser. No. 60, 377, 1981.Google Scholar
4. Petroff, P., Phys. Rev. Letters. in press (1986).Google Scholar
5. Pennycook, S., Brown, L.M. and Craven, A., Phil. Mag. A, 41, 589, 1980.Google Scholar
6. Yamamoto, N., Spence, J.C.H., Hazelton, D. and Higgs, A.A., Proc. EMSA Meeting, edited by Bailey, G.W. (San Francisco: San Francisco Press), 146 (1982).Google Scholar
7. Graham, R.J. and Spence, J.C.H., Rev. Sci., Insts. in preparation (1987).Google Scholar
8. Drozdov, N.A., Patrin, A.A. and Tkachev, V.D., Soy. Phys. JETP. Lett. 23, 597, 1976.Google Scholar
9. Sauer, R., Weber, J., Stolz, J., Weber, E.R., Kiisters, K.-H. and Alexander, H., Appl. Phys. A36, 1, 1985.Google Scholar
10. Suezawa, M., Sasaki, Y. and Sumino, K., Phys. Stat. Sol. 79(a) 73 (1983).CrossRefGoogle Scholar
11. Mergel, D., Phys. Stat. Sol. 75(a) 396 (1983).Google Scholar
12. Maeda, K., Sata, M., Kubo, A. and Takeuchi, S., Tech. Rep. of ISSP, Ser. A (Univ. of Tokyo) 1243 (1982).Google Scholar
13. Chew, N., Cullis, A., Warwick, C., Robbines, D., Haldeman, R. and Garson, D., Inst. Phys. Conf. Ser. No. 76, 129, 1985.Google Scholar
14. Wessel, K. and Alexander, H., Phil. Mag. 35, 1523, 1977.Google Scholar
15.See J. de Phys. Coll. C4. (1983) for a revlew, volume 44.Google Scholar
16. Chelikowski, J. and Spence, J.C.H., Phys. Rev. B30, 694, 1984.CrossRefGoogle Scholar
17. Suezawa, M. and Sumino, K., J. de Phys. Coll. C4, Vol. 44, 133, 1983.Google Scholar
18. Drozdov, N.A., Patrin, A.A. and Tkachev, V.D., Phys. Stat. Sol. (a) 64, K63 (1981).Google Scholar
19. Osip'yan, Y.A., Rtishchev, A.M., Shteinman, E.A., Yakimov, E.B. and Yargkin, N.A., Sov. Phys. JETP, 55, 294, 1982.Google Scholar
20.“Optical Constants of Solids” Acaemic Press (ed. Palik, E.D.) (1985).Google Scholar
21. Liliental, Z., Krivanek, O.L., Goodnick, S.M. and Wilmsen, C.W., Mat. Res. Soc. Symp. Proc. Vol 37 (Gibson, J.M. ed.) Pittsburgh: Mat. Res. Soc. 193 (1985).Google Scholar
22. Norris, C., Personal Communication (1986).Google Scholar
23. Sauer, R., Kisielowski-Kemmerich, C. and Alexander, H., Int. Symp. “Structure and Properties of Dislocations” Moscow (1986) (in press).Google Scholar
24. Alexander, H., Spence, J.C.H., Shindo, D., Gottschalk, H. and Long, N., Phil. Mag. A53, 627, 1986.Google Scholar
25. Berger, S. ain Brown, M., Inst. Phys. Cont. Ser. 68, 115, 1983.Google Scholar
26. Salkov, E.A., Sov. Phys. Sol. Sta. 7, 227, 1965.Google Scholar
27. Davidson, S.M., Cumberbatch, T.J., Huang, E. and Myhajlenko, S., Inst. Phys. Conf. Ser. 60, 191, 1981.Google Scholar
28. Saba, F.M. and Holt, D.B., Inst. Phys. Conf. Ser. 76, 389, 1985.Google Scholar
29. Ahn, C.C. and Krivanek, O.L., Proc. ENSA Meeting, edited by Bailey, G.W. (San Francisco: San Francisco Press), 406 (1985).Google Scholar
30. Graham, R.J., Ahn, C.C. and Krivanek, O.L., Ultramicroscopy, in preparation (1987).Google Scholar