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Infrared Luminescence from MOCVD Gan
Published online by Cambridge University Press: 21 February 2011
Abstract
An infrared emission peak at 1.25 eV is observed from a GaN film which exhibits strong yellow luminescence peaking at 2.15 eV. It is most efficient at a temperature of 160 K. The full width at half maximum (FWHM) of the IR peak is 0.17±0.01 eV, which is about 1/3 that of the yellow peak.
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- Copyright © Materials Research Society 1994
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