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InGaAs/GaAs Graded Superlattices in Photodetectors for Wavelengths Beyond 1 μm

Published online by Cambridge University Press:  28 February 2011

R. Mariella ,
J. Morse  and
Z. Liliental-Weber
R. Mariella
Affiliation:
Lawrence Livermore National Lab., PO Box 808, MS L228, Livermore, CA 94550
J. Morse
Affiliation:
Lawrence Livermore National Lab., PO Box 808, MS L228, Livermore, CA 94550
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Lab., 1 Cyclotron Rd., 62-203, Berkeley, CA 94720
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Abstract

We have used MBE to grow graded InxGa1−xAs/GaAs superlattices on GaAs substrates as buffers for larger period, constant composition InxGa1−xAs/GaAs superlattices. TEM analysis shows that there are numerous crystal defects associated with the presence of strained layers, but, in many cases, the buffer layers confine these defects to areas outside of the strained-layer superlattices. PIN detectors fabricated from these structures show external quantum efficiencies up to 2.7 %.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 297
Copyright
Copyright © Materials Research Society 1990

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References

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