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Ingan Quantum Dots Fabricated On Aigan Surfaces -Growth Mechanism And Optical Propertiesh-

Published online by Cambridge University Press:  10 February 2011

H. Hirayama ,
S. Tanaka ,
P. Ramvall  and
Y. Aoyagi
H. Hirayama
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, hirayama@postman.riken.go.jp
S. Tanaka
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, hirayama@postman.riken.go.jp
P. Ramvall
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, hirayama@postman.riken.go.jp
Y. Aoyagi
Affiliation:
The Institute of Physical and Chemical Research (RIKEN) Hirosawa 2- 1, Wako- shi, Saitama, 351- 01, Japan, hirayama@postman.riken.go.jp
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Abstract

We demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜0.22 to ˜0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 737
Copyright
Copyright © Materials Research Society 1998

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