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Initial Obsevation of the Crystal-Amorphous Transition and the Formation of Ripple Patterns on Silicon Induced by 7 ps Pulses at 1.05 µm
Published online by Cambridge University Press: 22 February 2011
Abstract
We describe our preliminary observations of the interaction of short pulse 1 µm radiation with crystalline silicon. In particular we find that for 7 ps pulses, but not for 46 ps pulses, the crystal-amorphous transition can be induced on the Si surface. Additionally, we have measured the single shot melting threshold for c-Si to be 0.6 ± 0.2 J cm-2 for 7 ps pulses. The formation of ripple patterns and other surface structures with pulses as short as 4 ps is also reported.
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- Copyright © Materials Research Society 1984
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