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Initial Stage of Cvd Copper Deposition on Teos Oxide

Published online by Cambridge University Press:  15 February 2011

Tue Nguyen ,
Shusheng He  and
Lawrence J. Charnesky
Tue Nguyen
Affiliation:
Sharp Microelectronics Technology, Inc. Camas, WA 98607
Shusheng He
Affiliation:
Sharp Microelectronics Technology, Inc. Camas, WA 98607
Lawrence J. Charnesky
Affiliation:
Sharp Microelectronics Technology, Inc. Camas, WA 98607
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Abstract

Selective deposition of copper on metal (such as TiN) versus dielectric (such as oxide) requires understanding of the mechanism of chemical-vapor-deposition copper deposition. This work studies the initial stage of CVD copper deposition with hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (Cu-hfac-tmvs) precursor on tetraethylorthosilicate (TEOS) oxide using Fourier transform infrared spectroscopy (FTIR).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 681
Copyright
Copyright © Materials Research Society 1996

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References

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