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Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces
Published online by Cambridge University Press: 21 February 2011
Abstract
The initial stages of SiO2/Si interface formation on hydrogen-terminated n-type and p-type Si(111) surfaces, which are obtained by the treatment in 40% NH4F solution, were investigated in details at 300°C in dry oxygen with a pressure of 1 Torr up to nearly two molecular layers of silicon oxide. It was found that the oxidation proceeds more uniformly on p-type Si than on n-type Si. However, even on p-type Si the oxidation does not proceed uniformly.
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- Copyright © Materials Research Society 1993
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