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In-Situ Ftir and Mass Spectrometric Studies of Gallium Arsenide Metalorganic Chemical Vapor Deposition: Trimethyl Gallium and Tertiary-Butyl Arsine on GaAs(100)

Published online by Cambridge University Press:  25 February 2011

Ananth V. Annapragada  and
Klavs F. Jensen
Ananth V. Annapragada
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology Cambridge MA 02139
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology Cambridge MA 02139
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Abstract

Low pressure (∼10−5 Torr) studies of the adsorption and decomposition of tertiarybutyl arsine (t-BAs) on three different GaAs(100) surfaces (Ga-rich, H-atom treated and high temperature t-BAs treated) are presented. Mass spectrometric studies indicate that the primary gas-phase products of t-BAs decomposition on GaAs(100) are the tertiary-butyl radical and incomplete arsenic hydrides (predominantly AsH2). Infrared spectroscopic studies show that on H-atom treated and high-temperature t-BAs treated surfaces, t-BAs decomposes leaving behind very small quantities of alkyl groups. On Ga-rich surfaces however, significant amounts of alkyl products are observed. The surface species resulting from the adsorption of trimethyl gallium (TMG) are shown to be different at room temperature and high temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 53
Copyright
Copyright © Materials Research Society 1991

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References

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