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The Interaction of Twin Boundaries with Grain Boundaries in YBa2Cu3O7-δ

Published online by Cambridge University Press:  15 February 2011

Jenn-Yue Wang  and
Alexander H. King
Jenn-Yue Wang
Affiliation:
Department of Materials Science & Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2275
Alexander H. King
Affiliation:
Department of Materials Science & Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2275
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Abstract

Twins in YBa2Cu3O7-δ may be “correlated” at [001] tilt grain boundaries (i.e. twin boundaries from one grain may meet twin boundaries from the other grain in quadruple junctions) and the twins may also be narrowed or “constricted” at the boundary. These effects are more pronounced in the regime of small angle grain boundaries. Based on TEM observations, a tentative threshold misorientation angle of approximately 15° is identified, below which there is a significant driving force reducing the system energy by correlation. The energies of various grain boundary domain structures associated with the twins were estimated on the basis of the dislocations they contain. Success has been obtained in explaining twin correlation in symmetrical tilt boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 133
Copyright
Copyright © Materials Research Society 1995

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References

1. Dimos, D., Chaudhari, P., Mannhart, J. and Legoues, F.K., Phys. Rev. Lett., 61, 219 (1988).Google Scholar
2. Dimos, D., Chaudhari, P. and Mannhart, J., Phys. Rev. B, 41(7), 4038 (1990).Google Scholar
3. Gross, R., Interfaces in High-Tc Superconducting System, eds. Shindé, S.L., Rudman, D.A., p. 176, 1994 Google Scholar
4. Smith, D.A., Chisholm, M.F. and Clabes, J., Appl. Phys. Lett. 53, 5 (1988)Google Scholar
5. Zhu, Y., Zhang, H., Wang, H., J. Mater. Res. 6, 2507 (1991)Google Scholar
6. Wang, J.-Y., Zhu, Y., King, A.H., and Suenaga, M., Proc. 51st. Ann. Mtg. MSA, Eds. Bailey, G.W. and Rieder, C.L. (San Francisco Press, San Francisco, 1993).Google Scholar
7. Babcock, S.E. and Larbelestier, D.C., J. Mater. Res., 5, 919 (1988).Google Scholar
8. King, A.H. and Singh, A., J. Appl. Phys., 74(7), 4627 (1993).Google Scholar
9. Babcock, S.E., Cai, X.Y., Larbelestier, D.C., and Kaiser, D.L., Nature, 347, 167 (1990).Google Scholar
10. Samelli, E., Chaudhari, P., and Lacey, J., Appl. Phys. Lett., 62(7), 777 (1993).Google Scholar
11. Gayle, F.W. and Kaiser, D.L., J. Mater. Res. 6, 908 (1991).Google Scholar
12. Wang, J.-Y. and King, A.H., Defect-Interface Interactions, ed. King, Kvam, Mills, Sands and Vitek, , MRS Symp. Ser. 319, 227 (1993).Google Scholar
13. Wang, Y.L., Tan, Z.Q., Zhu, Y., Moodenbaugh, A.R., and Suenaga, M., J. Mater. Res., 7, 3175 (1992)Google Scholar
14. Bollmann, W., Phil. Mag., 16, 363, (1967); p. 383.Google Scholar
15. Bollmann, W., Crystal Defects and Crystalline Interfaces, Springer (Berlin) 1972.Google Scholar
16. Read and Shockley, Phys. Rev., 78, 275 (1950).Google Scholar
17. Nakahara, S., Fisanick, G. J., Yan, M. F., Dover, R. B. van, Boone, T., and Moore, R., J. Cryst. Growth, 85, 639(1987).Google Scholar
18. Nagata, A., Oikawa, M. and Izumi, O., 11th International Conference on Magnet Technology, 1401 (1990).Google Scholar