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Interactions at Metaijinp Interfaces Formed at 300K and 77K

Published online by Cambridge University Press:  10 February 2011

J.W. Palmer ,
W.A. Anderson ,
D.T. Hoelzer  and
H. Hardtdegen
J.W. Palmer
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Center for Electronic and Electro-Optic Materials, 215 Bonner Hall, Buffalo, NY 14260
W.A. Anderson
Affiliation:
State University of New York at Buffalo, Department of Electrical and Computer Engineering, Center for Electronic and Electro-Optic Materials, 215 Bonner Hall, Buffalo, NY 14260
D.T. Hoelzer
Affiliation:
NYS College of Ceramics, Alfred University, McMahon Hall, Alfred, NY 14802
H. Hardtdegen
Affiliation:
Institut f¨r Schicht- und lonentechnik, Forschungszentrum J¨lich GmbH, Postfach 1913, D-5170 J¨lich, Germany
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Abstract

Depositing Pd or Au on n-InP at cryogenic substrate temperatures has previously been found to significantly increase the barrier height of the resulting Schottky diode. Cross-sectional transmission electron microscopy (XTEM) has been performed on Pd/InP and Au/InP interfaces formed at room temperature (RT) and low temperature (LT) to determine the differences responsible for the change in barrier height. In the Pd case, a solid state amorphization which occurs at the interface upon RT metal deposition is nearly eliminated in as-deposited LT Pd/InP diodes. In the Au case, RT deposition results in the initial monolayers of Au entering the InP lattice, while no such effect was observed in the LT Au/InP diodes. It is clear that the LT deposition dramatically reduces the interaction between the metal and substrate, resulting in a greater barrier height. Enhanced barrier height Schottky diodes are crucial to the development of optical and electronic devices on InP. Preliminary results will be discussed on metalsemiconductor- metal (MSM) photodetectors and metal-semiconductor field-effect-transistors (MESFET's) fabricated using the LT process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 257
Copyright
Copyright © Materials Research Society 1996

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