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Interdiffusion and Stress Evolution During Solid-State Amorphization in Ni-Hf Thin-Film Diffusion Couples

Published online by Cambridge University Press:  15 February 2011

M. Atzmon  and
W. S. L. Boyer
M. Atzmon
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109-2104
W. S. L. Boyer
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, MI 48109-2104
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Abstract

Using a combination of x-ray diffraction and curvature measurements, the stress evolution during solid-state amorphization in a Ni-Hf diffusion couple has been monitored. In contrast to the Co-Hf system, no dissolution of Ni in Hf is observed. During interdiffusion, the growing amorphous layer develops a large tensile stress, which subsequently relaxes by creep. Irradiation of the diffusion couple leads to an increase in tensile stress, and a further increase following a subsequent anneal. Composition measurements by Rutherford backscattering spectrometry indicate absence of an effect of the stress variations on the effective interdiffusion coefficient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 400: Symposium E – Metastable Metal-Based Phases and Microstructures , 1995 , 143
Copyright
Copyright © Materials Research Society 1996

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