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Interdiffusion of Au/Ni/cr on Silicon Substrate

Published online by Cambridge University Press:  26 February 2011

B. Yan ,
D. Lin  and
D. Mao
B. Yan
Affiliation:
Department of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
D. Lin
Affiliation:
Department of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
D. Mao
Affiliation:
Department of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
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Abstract

The interdiffusion between Au/Ni/Cr multilayer metallization and silicon substrate was studied by using the measurement of sheet resistance and AES profiling technique. Interdiffusion was found to increase with temperature and resulted in the increase of sheet resistance. The effect of Cr and Ni as diffusion barrier was also verified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 223
Copyright
Copyright © Materials Research Society 1988

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References

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