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Interface Morphology, Nucleation and Island Formation of Tisi2 on Si(111).

Published online by Cambridge University Press:  25 February 2011

Hyeongtag Jeon ,
C. A. Sukow ,
J. W. Honeycutt ,
T. P. Humphreys ,
R. J. Nemanich  and
G. A. Rozgonyi
Hyeongtag Jeon
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
C. A. Sukow
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
J. W. Honeycutt
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
T. P. Humphreys
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
R. J. Nemanich
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. A. Rozgonyi
Affiliation:
Department of Physics and Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

In this study we investigate the formation mechanisms and morphology of TiSi2 formed by deposition of Ti on atomically clean silicon substrates. Ti films of 50–400 Å thickness were deposited in ultra-high vacuum on Si (111) wafers and annealed to temperatures between 500–900°C. Films were monitored in situ with AES and LEED, and post preparation characterization was accomplished with SEM, TEM and Raman scattering. The results show that for films of thickness ≤, 100 Å the C49 TiSi2 phase is stable over the entire 600-800°C temperature range. However, for films of 200-400 Å thickness, the C49 to C54 phase transition occurs at temperatures varying from 700 to 800°C dependent upon film thickness. The high temperature annealing results in flat interface structures, and island formation is observed for all films with the C54 structure. The interface morphology and the mechanisms of TiSi2 island and phase formation are discussed in terms of surface and bulk free energies considerations based on nucleation theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 559
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Murarka, S. P., J. Vac. Sci. Technol. 17, 775 (1980).CrossRefGoogle Scholar
2. Nemanich, R. J., Fiordalice, R., and Jeon, Hyeongtag, IEEE. J. Quant. Elect. 25, 997 (1989).CrossRefGoogle Scholar
3. Jeon, Hyeongtag, Nemanich, R. J., Thin Solid Films. 184, 357 (1990).Google Scholar
4. Revesz, P., Zheng, L. S., Hung, L. S., and Mayer, J. W., Appl. Phys. Lett. 48, 1591 (1986).CrossRefGoogle Scholar
5. Jeon, Hyeongtag, Nemanich, R. J., Honeycutt, J. W., and Rozgonyi, G. A., Mat. Res. Soc. Symp. Proc. 160 (1989) (in press).Google Scholar
6. Beyers, R., and Sinclair, R., J. Appl. Phys. 57, 5240 (1985).CrossRefGoogle Scholar
7. Fenner, D. B., Biegelsen, D. K., and Bringans, R. D., J. Appl. Phys. 66, 419 (1989).Google Scholar
8. Jeon, Hyeongtag, Honeycutt, J. W., Sukow, C.A., Humphreys, T.P., Nemanich, R.J., and Rozgonyi, G.A., Mat. Res. Soc. Symp. Proc.,(Symposium V, 1990 Spring MRS Meeting).Google Scholar
9. Fung, M. S., Cheng, H. C., and Chen, L. J., Appl. Phys. Lett. 47, 1312 (1985)CrossRefGoogle Scholar
10. Nemanich, R. J., Doland, C. M., Fulks, R. T., and Ponce, F. A., Mat. Res. Soc. Symp. Proc. 54, 255 (1986).Google Scholar
11. Nemanich, R. J., Doland, C. M., and Ponce, F. A., J. Vac. Sci. Technol. B5, 1039 (1987).CrossRefGoogle Scholar