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Interface Properties of Heterovalent InSb Multilayer Structures

Published online by Cambridge University Press:  25 February 2011

M. Kobayashi
Affiliation:
School of Elec. Eng., Purdue Univ., W. Lafayette, IN 47907 USA D. Li and N. Otsuka School of Mat. Eng., Purdue Univ., W. Lafayette, IN 47907, USA
R. L. Gunshor
Affiliation:
School of Elec. Eng., Purdue Univ., W. Lafayette, IN 47907 USA D. Li and N. Otsuka School of Mat. Eng., Purdue Univ., W. Lafayette, IN 47907, USA
J. L. Glenn Jr.
Affiliation:
School of Elec. Eng., Purdue Univ., W. Lafayette, IN 47907 USA D. Li and N. Otsuka School of Mat. Eng., Purdue Univ., W. Lafayette, IN 47907, USA
Sungki O
Affiliation:
School of Elec. Eng., Purdue Univ., W. Lafayette, IN 47907 USA D. Li and N. Otsuka School of Mat. Eng., Purdue Univ., W. Lafayette, IN 47907, USA
J. Han
Affiliation:
School of Elec. Eng., Purdue Univ., W. Lafayette, IN 47907 USA D. Li and N. Otsuka School of Mat. Eng., Purdue Univ., W. Lafayette, IN 47907, USA
D.R. Menke
Affiliation:
School of Elec. Eng., Purdue Univ., W. Lafayette, IN 47907 USA D. Li and N. Otsuka School of Mat. Eng., Purdue Univ., W. Lafayette, IN 47907, USA
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Abstract

Multilayer InSb/CdTe and InSb/MnTe heterostructures are grown by molecular beam epitaxy. The analysis of multilayer structures by transmission electron microscopy (TEM) and x-ray rocking curves confirms the presence of periodic heterointerfaces. TEM, x-ray, and x-ray photoelectron spectroscopy (XPS) measurements are found to provide a sensitive indicator for the presence of ultra-thin interfacial layers. Double barrier structures in the MnTe/InSb/MnTe configuration exhibit the negative differential resistance which is characteristic of resonant tunneling diodes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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