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Interface Roughness of Quantum Wells Studied by Time-Resolved Photoluminescence

Published online by Cambridge University Press:  25 February 2011

H. X. Jiang ,
P. Zhou ,
S. A. Solin  and
G. Bai
H. X. Jiang
Affiliation:
Kansas State Univ., Manhattan, KS 66506
P. Zhou
Affiliation:
Michigan State Univ., E. Lansing, MI 48824
S. A. Solin
Affiliation:
Michigan State Univ., E. Lansing, MI 48824
G. Bai
Affiliation:
California Institute of Technology, Pasadena, CA 91125.
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Abstract

Optical properties of GaAs-Al0 5Ga0 5As multiple quantum wells affected by interface roughness have been investigated by timeresolved photoluminescence. The interface roughness affects on exciton dynamics is shown to be more complicated than those previously well studied line-width broadening of exciton transitions. A two-exponential decay of exciton luminescence and exciton peak shifting with increasing delay time have been observed. These observations have been successfully interpreted in terms of the interface roughness effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 361
Copyright
Copyright © Materials Research Society 1989

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