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Interfacial Reactions Between Metal Thin Films and p-GaN

Published online by Cambridge University Press:  21 February 2011

J.T. Trexler ,
S.J. Miller ,
P.H. Holloway  and
M.A. Khan
J.T. Trexler
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400
S.J. Miller
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400
P.H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400
M.A. Khan
Affiliation:
APA Optics Inc., 2950 NE 84th Lane, Blaine, MN 55449.
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Abstract

The reactions between Au, Au/Ni and Au/C/Ni thin films on p-GaN have been studied using current-voltage (I-V) measurements, Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS). The metallization schemes consisted of ≈2000Ǻ sputtered Au, 1000Ǻ Au/500Ǻ Ni, and 1000Ǻ Au/100Ǻ C/500Ǻ Ni electron beam evaporated. The Au/Ni metallization scheme is of particular interest since it is the basis for the most commonly used ohmic p-type contacts for blue GaN LED’s. Au does not decompose the GaN matrix, while Ni has been shown to react with GaN above a temperature of 400° C for times longer than 5 minutes. Upon decomposition of the GaN by Ni, incorporation of C at the metal/GaN interface occurred. It is believed that a regrowth of GaN occurred, with the surface region being doped with C. Attempts at increasing this doping concentration by introducing an interfacial C layer were not successful.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 819
Copyright
Copyright © Materials Research Society 1996

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References

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