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Intersubband Absorption in the Conduction Band of Si/Si1−xGex Multiple Quantum Wells

Published online by Cambridge University Press:  22 February 2011

H. Hertle ,
G. Schuberth ,
E. Gornik ,
G. Abscreiter  and
F. Schäffler
H. Hertle
Affiliation:
Walter Schottky Institut, Technische Universität München, D-8046 Garching, FRG
G. Schuberth
Affiliation:
Walter Schottky Institut, Technische Universität München, D-8046 Garching, FRG
E. Gornik
Affiliation:
Walter Schottky Institut, Technische Universität München, D-8046 Garching, FRG
G. Abscreiter
Affiliation:
Walter Schottky Institut, Technische Universität München, D-8046 Garching, FRG
F. Schäffler
Affiliation:
Daimler-Benz AG, Forschungszentrum Ulm, D-7900 Ulm, FRG
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Abstract

The intersubband absorption of electrons in modulation doped Si/Si1−xGex multiple quantum wells has been observed [1]. Various samples with different well widths and carrier densities have been studied. Narrow absorption lines are observed in waveguide geometry. Self consistent subband calculations are in good agreement with the experimental values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 379
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] An extended version of this work has been submitted for publication to Appl. Phys. Letters.Google Scholar
[2] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., and Herzog, H. -J., Phys. Rev. Lett. 54, 2441 (1985)Google Scholar
[3] Balslev, J., Phys. Rev. 143, 636 (1966).Google Scholar
[4] Kasper, E., Kibbel, H., and Scäffler, F., J. Electrochem. Soc. 136, 1154 (1989).CrossRefGoogle Scholar
[5] Jorke, H., and Kibbel, H., J. Electrochem. Soc. 133, 774 (1986).Google Scholar
[6] Schuberth, G., Besson, M., Abstreiter, G., Gornik, E., and Schaffier, F., (submitted for publication).Google Scholar