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Investigation of Bi-Exciton Formation in Doped GaAsAlxGa(1-x)as Quantum Wells
Published online by Cambridge University Press: 21 February 2011
Abstract
A number of recent studies of GaAs/AlxGa(1-x)As quantum wells using low temperature photoluminescence have demonstrated the formation of bi-excitons. It is generally assumed that bi-excitons will only be formed in samples with low impurity concentration, we demonstrate in this work that bi-excitons can be observed in 150 Å quantum well samples with an acceptor doping density as high as 3x1017 cm-3. We discuss how bi-exciton formation is limited by impurity capture and show how this influence can partly account for the less than quadratic intensity dependence typically observed.
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- Copyright © Materials Research Society 1994