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Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

Published online by Cambridge University Press:  10 February 2011

M. Ashurov ,
Sh. Makhkamov ,
N.A. Tursunov  and
S.V. Martynchenko
M. Ashurov
Affiliation:
Institute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, Uzbekistan
Sh. Makhkamov
Affiliation:
Institute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, Uzbekistan
N.A. Tursunov
Affiliation:
Institute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, Uzbekistan
S.V. Martynchenko
Affiliation:
Institute of Nuclear Physics of Uzbekistan Academy of Sciences, Ulughbek, 702132, Tashkent, Uzbekistan
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Abstract

In this paper the results of studies of the influence of radiation and thermal processing on activation of impurity centers (Au, Ag, Pt, Rh) in p-n-structures based on doped silicon are presented. It is shown that the thermal processing in the temperature range of 600-700°C leads to significant increasing of the concentration of electrically active impurities in the samples irradiated by, -rays as compared to the non-irradiated samples as well as to increasing of their decay temperature. These effects depend on the type and fluence of irradiation and can be explained by formation of additional electrically active states of impurities due to decay of complexes of radiation defects and electrically non-active impurities. A possible mechanism of activation process of impurity centers in silicon under radiation and thermal processing is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 265
Copyright
Copyright © Materials Research Society 1998

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