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Investigation of MgAlON Films on Electron Emission Properties

Published online by Cambridge University Press:  31 January 2011

Mikihiko Nishitani ,
Masahiro Sakai ,
Masaharu Terauchi ,
Yukihiro Morita  and
Yasushi Yamauchi
Mikihiko Nishitani
Affiliation:
nishitani@mit.eng.osaka-u.ac.jp, Osaka University, Co-operation Laboratory of Panasonic, Osaka, Japan
Masahiro Sakai
Affiliation:
sakai.masahiro001@jp.panasonic.com, Panasonic Corporation, Image Devices Development Center, Osaka, Japan
Masaharu Terauchi
Affiliation:
terauchi@mit.eng.osaka-u.ac.jp, Osaka University, Co-operation Laboratory of Panasonic, Osaka, Japan
Yukihiro Morita
Affiliation:
morita@mit.eng.osaka-u.ac.jp, Osaka University, Co-operation Laboratory of Panasonic, Osaka, Japan
Yasushi Yamauchi
Affiliation:
YAMAUCHI.Yasushi@nims.go.jp, National Institute of Material Science (NIMS), Ibaraki, Japan
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Abstract

The film of MgO-AlN system was manufactured by the conventional magnetron sputtering process. It is observed that a Fermi level could be raised by letting AlN composition increase, confirmed by ultraviolet (UV) photon energy dependence of the electronic emission, and investigated with XPS that the surface reaction, such as surface hydroxide / carbonate of MgO, could be controlled in addition of AlN. The glow discharge characteristics for MgAlON films were evaluated from the minimum pressure that a glow discharge is started under constant RF power, which correspond to the result of the analysis for the secondary electron emission coefficient, using Metastable De-excitation Spectroscopy (MDS).

Keywords

oxidenitrideelectronic structure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1174: Symposium V – Functional Metal-Oxide Nanostructures , 2009 , 1174-V06-11
Copyright
Copyright © Materials Research Society 2009

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