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Investigation of silicon carbide physical vapor transport growth on the C-terminated face of 6H seeds

Published online by Cambridge University Press:  21 March 2011

D. Schulz ,
J. Doerschel ,
K. Irmscher ,
H.-J. Rost ,
D. Siche  and
J. Wollweber
D. Schulz
Affiliation:
Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, GERMANY, +49 30 6392 2844, +49 30 6392 3003, dschulz@ikz-berlin.de
J. Doerschel
Affiliation:
Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, GERMANY, +49 30 6392 2844, +49 30 6392 3003, dschulz@ikz-berlin.de
K. Irmscher
Affiliation:
Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, GERMANY, +49 30 6392 2844, +49 30 6392 3003, dschulz@ikz-berlin.de
H.-J. Rost
Affiliation:
Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, GERMANY, +49 30 6392 2844, +49 30 6392 3003, dschulz@ikz-berlin.de
D. Siche
Affiliation:
Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, GERMANY, +49 30 6392 2844, +49 30 6392 3003, dschulz@ikz-berlin.de
J. Wollweber
Affiliation:
Institut für Kristallzüchtung, Max-Born-Str. 2, D-12489 Berlin, GERMANY, +49 30 6392 2844, +49 30 6392 3003, dschulz@ikz-berlin.de
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Abstract

Sublimation growth of 6H-SiC has been studied with respect to surface morphology, growth temperature, supersaturation and growth rate. Growth was performed on the C-terminated face of 6H seeds mainly and for comparison also the Si-terminated face was used. Step bunching is observed dependent on different parameters and is strongly influenced by the seed orientation. The growth rate of 4H on the C-face is found to be higher than the rate of 6H grown on the Siface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H1.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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