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Ion Beam Synthesis of Buried Single Crystal Erbium Silicide

Published online by Cambridge University Press:  26 February 2011

A. Golanski ,
R. Feenstra ,
M. D. Galloway ,
J. L. Park ,
S. J. Pennycook ,
H. E. Harmon  and
C. W. White
A. Golanski
Affiliation:
Centre National d’Etudes des Telecommunications, B.P.98, 38240 Meylan, France
R. Feenstra
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
M. D. Galloway
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
J. L. Park
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
H. E. Harmon
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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Abstract

High doses (1016–1017/cm2) of 170 keV Er+ were implanted into single-crystal 〈111〉Si at implantation temperatures between 350°C and 520°C. Annealing at 800°C in vacuum following the implant, the growth and coalescence of ErSi2 precipitates leads to a buried single crystalline ErSi2 layer. This has been studied using Rutherford backscattering/channeling, X-ray diffraction, cross-sectional TEM and resistance versus temperature measurements. Samples implanted at 520°C using an Er dose of 7 × 1016/cm2 and thermally annealed were subsequently used as seeds for the mesocpitaxial growth of the buried layer during a second implantation and annealing process. Growth occurs meso-epitaxially along both interfaces through beam induced, defect mediated mobility of Er atoms. The crystalline quality of the ErSi2 layer strongly depends on the temperature during the second implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 319
Copyright
Copyright © Materials Research Society 1991

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