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Ion Channeling Studies of CdTe Films on GaAs
Published online by Cambridge University Press: 22 February 2011
Abstract
Thin films of [111] oriented CdTe have been MOCVD grown onto [111] GaAs substrates. When thicknesses exceed 1000Å the epitaxy is quite good (backscattering minimum yield of approximately 15%) in spite of a 14% lattice mismatch. A narrowing of the Cd angular scan suggests a displacement of some of the Cd atoms in the lattice. A model based on a Te vacancy is presented to describe the data.
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- Copyright © Materials Research Society 1989
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