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Ion Implantation For High Performance Ill-V Jfets And Hfets

Published online by Cambridge University Press:  10 February 2011

J. C. Zolper ,
A. G. Baca ,
M. E. Sherwin  and
J. F. Klem
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
A. G. Baca
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
M. E. Sherwin
Affiliation:
Microwave Signal, Inc., 22300 COMSAT Dr., Clarksburg, MD 20871
J. F. Klem
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603
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Abstract

Ion implantation has been an enabling technology for the realization of many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing technology for application to GaAs JFETs, AlGaAs/GaAs HFETs, and InGaP or InA1P-barrier HFETs. In particular, the GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs will be reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on the donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to the absence of the deep donor (DX) level. An optimized P co-implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 209
Copyright
Copyright © Materials Research Society 1996

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