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ION Induced Crystallization and Amorphization of Silicon

Published online by Cambridge University Press:  21 February 2011

Kenneth A. Jackson
Kenneth A. Jackson*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Extensive experimental investigations which have been reported on the ion-induced motion of the interface between the crystalline and amorphous phases of silicon are shown to fit a model based on a single defect. The model accounts for the temperature and flux dependence of the interface motion. The defects annihilate each other by binary recombination, and have a motion energy of 1.2 eV. The defect is believed to be the dangling bond in the amorphous phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 39
Copyright
Copyright © Materials Research Society 1989

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