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Island Evolution During Early Stages of Ion-Assisted Film Growth: Ge ON SiO2

Published online by Cambridge University Press:  16 February 2011

Shouleh Nikzad ,
Harry A. Atwater  and
Thomas J. Watson
Shouleh Nikzad
Affiliation:
Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Thomas J. Watson
Affiliation:
Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

Microstructure evolution has been studied in the early stages of growth of polycrystalline Ge on SiO2 in ultrahigh vacuum by ion beam-assisted deposition, and has been systematically compared to conventional thermal film growth. Experimental results indicate that, at equivalent substrate coverages, films grown by ion beam-assisted deposition exhibit increased island density and decreased island size with respect to thermally-deposited films. The increased island density is not a result of an increased island nucleation rate associated with defects produced in the SiO2 substrate during ion beam-assisted deposition. Instead, a new model for ion beam-induced adatom desorption from islands is proposed to account for the increased island density and decreased island size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 53
Copyright
Copyright © Materials Research Society 1991

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References

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