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Isothermal Annealing of Ion Implanted Silicon With a Graphite Radiation Source

Published online by Cambridge University Press:  15 February 2011

S. R. Wilson ,
R. B. Gregory ,
W. M. Paulson ,
A. H. Hamdi  and
F. D. Mcdaniel
S. R. Wilson
Affiliation:
SRDL, Motorola, Inc., 5005 E. McDowell Road, Phoenix, Arizona, USA
R. B. Gregory
Affiliation:
SRDL, Motorola, Inc., 5005 E. McDowell Road, Phoenix, Arizona, USA
W. M. Paulson
Affiliation:
SRDL, Motorola, Inc., 5005 E. McDowell Road, Phoenix, Arizona, USA
A. H. Hamdi
Affiliation:
Dept. of Physics, North Texas State University, Denton, Texas, USA
F. D. Mcdaniel
Affiliation:
Dept. of Physics, North Texas State University, Denton, Texas, USA
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Abstract

Both (100) and (111) Si wafers were implanted with As, P or B to doses from 1013 to 1016/cm2 and annealed with a Varian IA-200 isothermal annealer. The anneal occurs in a vacuum using infrared radiation for exposure times of 5 to 30 sec. Sheet resistance (Rs), Hall effect, RBS and SIMS were used to analyze the wafers. For each dopant a decreasing Rs occurs with increasing exposure time until a minimum value is reached. Longer anneals produce increased dopant diffusion, and the Rs for As and P implanted wafers increased unless the wafer was capped with 0.05 μm of SiO2 which prevents a loss of dopant. The results for (100) wafers are better than for (111) with As doses ≤1015/cm2, however at doses >1015/cm2 the (100) and (111) results are comparable. The As implanted, isothermally annealed layers were thermally stable for As concentrations ≤2E 20/cm3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 369
Copyright
Copyright © Materials Research Society 1983

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References

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