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Kinetic Barriers to Strain Relaxation in GexSi1-x/Si Epitaxy

Published online by Cambridge University Press:  28 February 2011

R. Hull  and
J.C. Bean
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J.C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We discuss the kinetic barriers to misfit dislocation nucleation, propagation and interaction in lattice-mismatched GexSi1-x/Si epitaxy. Experimental real-time observations of the strain relaxation process via in-situ annealing experiments in a transmission electron microscope enable each of these processes to be separately studied. Quantitative parameters defining misfit dislocation processes may be derived; these are found to be highly dependent upon the structure geometry. The approximations involved in extending these measurements to a description of the relaxation process during growth are described in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 23
Copyright
Copyright © Materials Research Society 1990

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References

1Dodson, B.W. and Tsao, J.Y., Appl. Phys. Lett. 51, 1325 (1987); 52, 852 (1988)Google Scholar
2Tsao, J.Y., Dodson, B.W., Picreaux, S.T. and Cornelison, D.M., Phys. Rev. Lett. 59, 2455 (1987)Google Scholar
3Tsao, J.Y. and Dodson, B.W.; Ann. Rev. Mat. Sci. 19, 419 (1989)Google Scholar
4 Our own work is summarized in references 15–20, 28 and 32 below.Google Scholar
5Hauenstein, R.J., Miles, R.H., Croke, E.T. and McGill, T.C., to be published in proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Strasbourg, France, May, 1989Google Scholar
6Perovic, D.D., Weatherly, G.C. and Houghton, D.C., these proceedingsGoogle Scholar
7Frank, F.C. and van der Merwe, J.H., Proc. Roy. Soc. A198, 205 (1949); A198, 216 (1949); A200, 125 (1949)Google Scholar
8Van der Merwe, J.H. and Ball, C.A.B. in Epitaxial Growth, Part b, edited by Matthews, J.W. (Academic, New York, 1975), pp. 493–528Google Scholar
9Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974); 32, 265 (1974)Google Scholar
10Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K., J. Vac. Sci. Technol. A2, 436 (1984)Google Scholar
11Fritz, I.J., Appl. Phys. Lett. 51, 1080 (1987)Google Scholar
12Dodson, B.W., Phys. Rev. B38, 12383 (1988)Google Scholar
13Dodson, B.W., Appl. Phys. Lett. 53, 37 (1988)Google Scholar
14Gatan, , 780 Commonwealth Drive, Warrendale, PA 10586, model No. 628.Google Scholar
15Hull, R., Bean, J.C., Werder, D.J. and Leibenguth, R.E., Appl. Phys. Lett. 52, 1605 (1988)Google Scholar
16Hull, R., Bean, J.C., Werder, D.J. and Leibenguth, R.E., Phys. Rev. B., 40, 1681 (1989)Google Scholar
17Hull, R. and Bean, J.C., Appl. Phys. Lett. 54, 925 (1989)Google Scholar
18Hull, R. and Bean, J.C., J. Vac. Sci. Tech. A7, 2580 (1989)Google Scholar
19Hull, R. and Bean, J.C., Appl. Phys. Lett., 55, 1900 (1989)Google Scholar
20Hull, R., Bean, J.C., Eaglesham, D.J., Bonar, J.M. and Buescher, C., Thin Solid Films, Vol. 182, In Press.Google Scholar
21Freund, L.B., Ramirez, J.C. and Bower, A., these proceedingsGoogle Scholar
22Matthews, J.W., Blakeslee, A.E. and Mader, S., Thin Solid Films 33, 253 (1976)Google Scholar
23Eaglesham, D.J., Kvam, E.P., Maher, D.M., Humphreys, C.J. and Bean, J.C., Phil. Mag. A59, 1059 (1989)Google Scholar
24Freund, L.B., Bower, A. and Ramirez, J.C., published in Proc. Mat. Res. Soc. 130, ed. Bravman, J.C., Nix, W.D., Barnett, D.M. and Smith, D.A. (Materials Research Society, Pittsburgh, PA, 1989).Google Scholar
25Kvam, E.P., Maher, D.M. and Humphreys, C.J., these proceedingsGoogle Scholar
26Dodson, B.W., Hull, R. and Bean, J.C., submitted to Applied Physics LettersGoogle Scholar
27Hagen, W. and Strunk, H., Appl. Phys. 17, 85 (1978)Google Scholar
28Hull, R., Bean, J.C., Bonar, J.M., Higashi, G., Short, K.T., Temkin, H. and White, A.E., submitted to Applied Physics LettersGoogle Scholar
29Hirsch, P.B., Ourmazd, A. and Pirouz, P., Inst. Phys. Conf. Ser. No. 60 (Institute of Physics, Bristol, England, 1981), p. 29Google Scholar
30Kuesters, K.H., De Cooman, B.C. and Carter, C.B., Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, CA Aug. 1984, ed. Kimmerling, L.C. and Parsey, J.M. Jr. (AIME, Warrendale, PA, 1985), p. 351Google Scholar
31 See e.g. Hirth, J.P. and Loth, J.e, “Theory of Dislocations” (MGraw-Hill, New York, 1968).Google Scholar
32Hull, R. and Bean, J.C., to be published in Journal of Applied Physics, Dec. 1989Google Scholar