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Kinetic Effects and Mechanisms Limiting Substitutional Solubility in the Formation of Supersaturated Alloys by Pulsed Laser Annealing*

Published online by Cambridge University Press:  15 February 2011

C. W. White ,
B. R. Appleton ,
B. Stritzker ,
D. M. Zeiner  and
S. R. Wilson
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
B. Stritzker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
D. M. Zeiner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
S. R. Wilson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee
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Abstract

Pulsed laser annealing of silicon implanted by Group (III, V) dopants leads to the formation of supersaturated alloys by nonequilibrium processes occurring in the interfacial region during liquid phase epitaxial regrowth. The distribution coefficient from the melt (k') and the maximum dopant substitutional solubility (CSmax) are far greater than equilibrium values and both are functions of growth velocity. Substitutional solubility is limited by lattice strain and by constitutional supercooling at the interface during regrowth. Values for CSmax obtained at different growth velocities are compared with predictions of thermodynamic limits for solute trapping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 59
Copyright
Copyright © Materials Research Society 1981

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Footnotes

**

Institut fur Festkoperforschung, KFA, Julich, Julich, Germany.

+

Motorola, Inc., Phoenix, Arizona.

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

REFERENCES

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