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Kinetic Study Of Crystallisation In Amorphous Thin Lpcvd Si Films

Published online by Cambridge University Press:  15 February 2011

B. Pieraggi ,
J. P. Guillemet  and
B. de Mauduit
B. Pieraggi
Affiliation:
LMP, URA 445 du CNRS, ENSCT, 118 route de Narbonne, 31077 Toulouse Cedex, France
J. P. Guillemet
Affiliation:
CEMES-LOE, UPR 8011 du CNRS, BP 4347, 31055 Toulouse Cedex, France
B. de Mauduit
Affiliation:
CEMES-LOE, UPR 8011 du CNRS, BP 4347, 31055 Toulouse Cedex, France
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Abstract

The crystallisation behaviour of LPCVD silicon films has been investigated by TEM from in situ isothermal annealing of undoped a-Si films deposited from disilane (Si2H6) at temperatures 450,465 and 480 °C and at gas pressure of 200 MTorr. Nucleation kinetics, grain growth rates and crystallisation kinetics were determined for temperatures ranging from 600 to 675 °C. Nucleation kinetics have been experimentally determined in the early first stages of annealing : they do not show any steady-state rate and are fitted according to a power law. Experimental data for crystallisation kinetics are fitted by an Avrami law without introducing any incubation time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 283
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Iverson, R. B. and Reif, R., J. Appl. Phys. 62, 1675 (1987).Google Scholar
2. Hatalis, M.K. and Greve, D.W, J. Appl. Phys. 63, 2260 (1988).Google Scholar
3. Zellama, K., Germain, P., Squelard, S. and Bourgoin, J. C., J Appi Phys. 50, 6995 (1979).Google Scholar
4. Batstone, J. L., Phil. Mag. A67, 51 (1993).Google Scholar
5. Haji, L., Joubert, P., Guendouz, M., Duhamel, N. and Loisel, B., Mat. Res. Symp. Proc. 230, 177 (1992).Google Scholar
6. Kretz, T., Stroh, R., Legagneux, P., Huet, O., Magis, M. and Pribat, D., presented at POLYSE '93, Saint-Malo, France, September 1993 (to be published by Trans. Tech. Publications).Google Scholar
7. Nakasawa, K., J. Appl. Phys. 69, 1703 (1991).Google Scholar
8. Scheid, E., de Mauduit, B., Taurines, P. and Bielle-Daspet, D., Jpn. J. Appl. Phys. 29, L 2105 (1990).Google Scholar
9. Hong, C. H., Park, C. Y. and Kim, H. J., J. Appl. Phys. 71, 5427 (1992).Google Scholar
10. Voutsas, A. T. and Hatalis, M. K., J. Electrochem. Soc. 140, 871 (1993).Google Scholar
11. Guillemet, J. P., de Mauduit, B., Pieraggi, B., Campo, E. and Scheid, E., J. Mater. Sci. Lett. 12, 910 (1993).Google Scholar
12. Guillemet, J. P., de Mauduit, B., Pieraggi, B., Bielle-Daspet, D. and Scheid, E., Proc. E- MRS Spring Meeting, Strasbourg, France, May 1993, to appear in Mater. Sci. and Eng. A (1993) in press.Google Scholar
13. Csepregi, L., Kennedy, E. F., Mayer, J. W. and Sigmon, T. W., J. Appl. Phys 49, 3906 (1978).Google Scholar
14. Sinclair, R., Yamashita, T., Parker, M. A., Kim, K. B., Holloway, K. and Schwartzman, A. F., Acta. Cryst. A44, 965 (1988).Google Scholar
15. Köster, U., Phys. Stat. Sol. (a) 48, 313 (1978).Google Scholar
16. Sinclair, R., Morgiel, J., Kirtikar, A.S., Wu, I. W. and Chiang, A., Ultramicroscopy 51, 41 (1993).Google Scholar
17. Guillemet, J. P., Pieraggi, B., de Mauduit, B. and Claverie, A., presented at POLYSE '93, Saint-Malo, France, 1993 (to be published by Trans. Tech. Publications).Google Scholar