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Kinetics of Phase Formation in Cu-Al Thin Films Couples Studied by In-Situ X-Ray and Rutherford Backscattering Analysis.

Published online by Cambridge University Press:  22 February 2011

R. A. Hamm  and
J. M. Vandenberg
R. A. Hamm
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. M. Vandenberg
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Extract

X-ray diffraction (XRD) and Rutherford backscattering analysis (RBS) have been used independently to study the interface reaction of copperaluminum thin film couples during in-situ annealing in the temperature range 157°–220°C. For the X-ray studies a high vacuum annealing system was constructed on a Huber-Guinier thin film goniometer base1. This system enabled us to monitor the thin film interface reaction via changes of integrated X-ray intensities during the annealing treatment. RBS analysis was carried out with an existing in-situ heating stage. Using both techniques isothermal annealing experiments were carried out for four different temperatures. For this study 900Å Cu/1600Å Al and 1800Å Cu/3200Å Al thin film couples were prepared by sequential evaporation onto water cooled oxidized <111> silicon and MgO substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 163
Copyright
Copyright © Materials Research Society 1984

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References

[1] Hamm, R. A. and Vandenberg, J. M., to be published.Google Scholar
[2] Campisano, S. U., Costanzo, E., Scacianoce, F. and Cristofolini, R., Thin Solid Films, 52, 97 (1978).CrossRefGoogle Scholar
[3] Hentzell, H. T. G., Thompson, R. D. and Tu, K. N., J. Appl. Phys., in print.Google Scholar
[4] Funamizu, Y. and Watanabe, K., Trans. Japan Inst. Metals, 12, 147 (1971).CrossRefGoogle Scholar