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Laser Crystallization of Silicon for Large Area Electronics

Published online by Cambridge University Press:  01 February 2011

Toshiyuki Sameshima
Toshiyuki Sameshima*
Affiliation:
tsamesim@cc.tuat.ac.jp, Tokyo University of Agriculture & Technology, Graduate School of Engineering, 2-24-16, Nakamachi, Koganei, 184-8588, Japan, 81-42-388-7109, 81-42-388-7109
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Abstract

Laser crystallization of silicon is discussed for forming polycrystalline silicon thin films used to fabricate polycrystalline silicon thin film transistors (poly-Si TFTs). Laser-induced rapid heating is important for crystalline film formation with a low thermal budget. Structural and electrical properties of poly-Si films are discussed. Reduction of electrical active defects located at grain boundaries is essential for achieving poly-Si TFTs with high performances. The internal film stress is attractive to increase the carrier mobility. Recent development in laser crystallization methods with pulsed and continuous wave (CW) lasers is then reviewed. Control of the heat flow results in crystalline grain growth in the lateral direction, which is essential for fabrication of large crystalline grains. We also report an annealing method using a high power infrared semiconductor laser. High power lasers will be attractive for rapid crystallization of silicon films over a large area and activation of doped regions.

Keywords

laser annealingSithin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A16-01
Copyright
Copyright © Materials Research Society 2007

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