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Laser Induced Photochemical Vapor Deposition of Tungsten on Silicon

Published online by Cambridge University Press:  21 February 2011

A. J. P. van Maaren  and
W. C. Sinke
A. J. P. van Maaren
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
W. C. Sinke
Affiliation:
FOM-Institute for Atomic and Molecular Physics Kruislaan 407, 1098 SJ Amsterdam, The Netherlands.
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Abstract

An ArF excimer laser (193 nm) aligned parallel to the substrate has been used to initiate photo-activation of the W-CVD process. W was deposited on silicon and SIMOX at a 310 °C substrate temperature using WF6 as a W precursor, together with H2. The samples were analyzed after deposition with SEM and 2 MeV He+ RBS, to obtain information about the reaction between WF6 and Si in laser-induced CVD of W. The data indicate that the reaction between WF6 and Si is suppressed upon laser irradiation. The suppression increases with increasing laser-pulse frequency. An explanation for this phenomenon is given in terms of atomic Hformation after (partial) photodissociation of WF6.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 293
Copyright
Copyright © Materials Research Society 1990

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