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Laser Melting and Recrystallization of Bulk Si by Nanosecond UV Laser Pulses

Published online by Cambridge University Press:  15 February 2011

C. Garcia ,
A.C. Prieto ,
J. Jimenez  and
L.F. Sanz
C. Garcia
Affiliation:
Física de la Materia Condensada, Cristalografía y Mineralogía. Facultad de Ciencias. Prado de la Magdalena. 47005 Valladolid, Spain
A.C. Prieto
Affiliation:
Física de la Materia Condensada, Cristalografía y Mineralogía. Facultad de Ciencias. Prado de la Magdalena. 47005 Valladolid, Spain
J. Jimenez
Affiliation:
Física de la Materia Condensada, Cristalografía y Mineralogía. ETS Ingenieros Industriales. Paseo del Cauce. 47011 Valladolid, Spain
L.F. Sanz
Affiliation:
Física de la Materia Condensada, Cristalografía y Mineralogía. ETS Ingenieros Industriales. Paseo del Cauce. 47011 Valladolid, Spain
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Abstract

Laser ablation of semiconductors presents an increasing interest for both thin film growth and surface modification. We present herein a study of the damage produced in bulk silicon by nanoseconds UV laser pulses with energy above the melting threshold. This study is carried out with a Raman microprobe. Polarized microRaman was used to reveal the main changes in the melted and recrystallized volume. These changes were observed in the liquid/solid boundaries, where tensile stress due to the induced thermal wave is more important. The morphology of the melted region evidences matter accumulation at such a boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 407
Copyright
Copyright © Materials Research Society 1996

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References

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