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Laser-Chemical Deposition and Etching on the Metallization Level of Integrated Circuits

Published online by Cambridge University Press:  28 February 2011

A. Wayne Johnson  and
K. E. Greenberg
A. Wayne Johnson
Affiliation:
Sandia National Laboratories, Laser and Atomic Physics Division, P. 0. Box 5800, Albuquerque, NM 87185
K. E. Greenberg
Affiliation:
Sandia National Laboratories, Laser and Atomic Physics Division, P. 0. Box 5800, Albuquerque, NM 87185
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Abstract

Laser-controlled chemical deposition and etching techniques were used to modify integrated circuits. This work used a pulsed laser to initiate and control the etching, by chlorine gas, of aluminum conductors. New conducting paths were then formed by laser-chemical vapor deposition of highly-doped silicon from silane and diborane. Improved conductivity of laser-deposited connectors was achieved by the selective deposition of tungsten on the silicon. These techniques were used to “rewire” an integrated circuit allowing the full evaluation of the corrected circuit design.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 645
Copyright
Copyright © Materials Research Society 1987

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References

1. Laser-Controlled Chemical Processing of Surfaces, edited by Johnson, A. Wayne, Ehrlich, Daniel J., Schlossberg, Howard R., North Holland, 1984.Google Scholar
2. Beam-Induced Chemical Processes, edited by Gutfeld, R. J. von, Greene, J. E., and Schlossberg, H. (Materials Research Society, Pittsburg, PA, 1985).Google Scholar
3. Greenberg, K. E., Johnson, A. Wayne, Medernach, J. W., and Jungling, K. in Beam-Induced Chemical Processes, edited by von Gutfeld, R. J., Greene, J. E., and Schlossberg, H. (Materials Research Society, Pittsburg, PA, 1985), p. 59.Google Scholar
4. Berg, R. S. and Mattox, D. M., in Chemical Vapor Deposition, Fourth International Conference, edited by Wakefield, Gene F. and Blocher, John M. Jr,. (The Electrochemical Society, Princeton, NJ, 1973), p. 196.Google Scholar
5. Ehrlich, D.J. and Tsao, J. Y., Appl. Phys. Lett. 44, 267 (1984).Google Scholar
6. Herman, I. P., Hyde, R. A., McWilliams, B. M., Weisberg, A. H., and Wood, L. L., in Laser Diagnostics and Photochemical Processing for Semiconductor Devices, edited by Osgood, R. M., Brueck, S. R. J., and Schlossberg, H. R. (North-Holland, Elsevier, New York, 1983), p. 19.Google Scholar
7. Bauerle, D., in Laser Diagnostics and Photochemical Processing for Semiconductor Devices, edited by Osgood, R. M., Brueck, S. R. J., and Schlossberg, H. R. (North-Holland, Elsevier, New York, 1983), p. 1.Google Scholar
8. Herman, Irving P., McWilliams, Bruce, Mitlitsky, Fred, Chin, Hon Wan, Hyde, Roderick A. and Wood, Lowell L. in Laser-Controlled Chemical Processing of Surfaces, edited by Johnson, A. Wayne, Ehrlich, Daniel J., and Schlossberg, Howard R. (North-Holland, Elsevier, New York, 1984), p. 29.Google Scholar
9. Liu, Y. S., Yakymyshyn, C. P., Philipp, H. R., Cole, H. S., and Levinson, L. M., J. Vac. Sci. Technol. B3, 144 (1985).Google Scholar