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Laser-Induced Fluorescence of Silicon and Silicon Monoxide in a Glow Discharge
Published online by Cambridge University Press: 21 February 2011
Abstract
Si atoms and SiO radicals have been monitored in DC ulow discharges via laser-induced fluorescence on the Si 4s 3P0-3P2−3P and SiO A1 π-x1Σ+ (0−0), (1−0) and (1−1) transitions. Production of Si 4s 3P0 in the 193 and 251 nm multiphoton dissociation of silanes has been observed and the implications for Si atom diagnostics discussed.
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