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Laser-Induced Solid Phase Crystallization in Amorphous Silicon Films

Published online by Cambridge University Press:  15 February 2011

G.L. Olson ,
S.A. Kokorowski ,
J.A. Roth  and
L.D. Hess
G.L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265
S.A. Kokorowski
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265
J.A. Roth
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265
L.D. Hess
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265
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Abstract

We review recent work on the kinetics of laser-induced solid phase epitaxial crystallization of silicon as determined from time-resolved reflectivity measurements. Specific topics which are addressed include: the intrinsic kinetics of solid phase epitaxy (SPE) in ion-implanted and UHV-deposited films; SPE rate enhancement by implanted dopant atoms and the effects of electrical compensation on the SPE rate; and the temperature dependence of SPE and competing processes in samples containing impurity atoms at concentrations exceeding the solid solubility limit. The high temperature kinetics results are compared with predictions from transition state theory and are discussed with respect to a proposed depression in the amorphous Si melting temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 141
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Current Address: Dikewood, A Division of Kaman Sciences Corp., 2716 Ocean Park Blvd., Santa Monica, CA 90405

References

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