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Lattice Defects in Epitaxial Ba2Bi4Ti5O18 Thin Films Grown by Pulsed Laser Deposition Onto LaNiO3 Bottom Electrodes

Published online by Cambridge University Press:  10 February 2011

N.D. Zakharov ,
A.R. James ,
A. Pignolet ,
S. Senz  and
D. Hesse
N.D. Zakharov
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
A.R. James
Affiliation:
now with Materials Res. Lab., Penn State University, University Park, PA, USA
A. Pignolet
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
S. Senz
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
D. Hesse
Affiliation:
Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany
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Abstract

Epitaxial, ferroelectric Ba2Bi4Ti5O18 films grown on LaNiO3/CeO2/ZrO2:Y2O3 epitaxial layers on Si(100) are investigated by cross-section high-resolution transmission electron microscopy (HRTEM). The films are perfectly oriented and consist of well-developed grains of rectangular shape. The grain boundaries are strained and contain many defects, especially a new type of defect, which can be described as a staircase formed by repeated lattice shifts of Δ ∼ c/12 ∼ 4.2 Å in the [001] direction. This repeated shift results in seemingly bent ribbons of stacked Bi2O2 planes, involving, however, individual Bi2O2 planes which remain strongly parallel to the (001) plane. These defects contain an excess of bismuth. Other defects found in the grain interior include mistakes in the stacking sequence originating from the presence of single, well-oriented, non-stoichionietric layers intergrown with the stoichiometric Ba2Bi4Ti5O18 film matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 173
Copyright
Copyright © Materials Research Society 2000

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