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Lattice Sites and Stability of Implanted Er in FZ and CZ Si

Published online by Cambridge University Press:  10 February 2011

U. Wahl ,
J. G. Correia ,
G. Langouche ,
A. Vantomme  and
Isolde collaboration
U. Wahl
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, ulrich.wahl@fys.kuleuven.ac.be
J. G. Correia
Affiliation:
CERN-PPE, CH-1211 Genève 23, Switzerland
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, ulrich.wahl@fys.kuleuven.ac.be
A. Vantomme
Affiliation:
Instituut voor Kern- en Stralingsfysica, University of Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium, ulrich.wahl@fys.kuleuven.ac.be
Isolde collaboration
Affiliation:
CERN-PPE, CH-1211 Genève 23, Switzerland
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Abstract

We report on the lattice location of 167Er in Si measured by conversion electron emission channeling. In both FZ and CZ Si, a high fraction of Er (>65%) occupies near-tetrahedral interstitial (T) sites directly following 60 keV room temperature implantation at doses of 6× 1012 cm−2 For higher doses, the as-implanted near-T fractions of Er visible by emission channeling are smaller, due to the beginning of amorphization. Following the recovery of implantation damage at 600°C, more than 70% of Er is found on near-T sites in both FZ and CZ Si. In FZ Si, Er exhibits a remarkable thermal stability and only prolonged annealing for several hours reduces the near-T fraction. On the other hand, annealing of CZ Si at 900°C for more than 10 minutes results in the majority of Er probes in sites of very low symmetry or disordered surroundings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 269
Copyright
Copyright © Materials Research Society 1998

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