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Leakage Currents through Thin Silicon Oxide Grown on Atomically Flat Silicon Surfaces

Published online by Cambridge University Press:  01 February 2011

Valerian Ignatescu  and
Jack M. Blakely
Valerian Ignatescu
Affiliation:
Materials Science & Engineering, Cornell University 214 Bard Hall, Ithaca, NY 14853–1501
Jack M. Blakely
Affiliation:
Materials Science & Engineering, Cornell University 214 Bard Hall, Ithaca, NY 14853–1501
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Abstract

Atomically flat surfaces can be obtained by high-temperature annealing in UHV of specially patterned silicon samples. Thin silicon oxide layers were grown by dry oxidation on three types of surfaces: (a) atomically flat surfaces, (b) normal (stepped) surfaces cleaned in UHV by the same high-temperature annealing and (c) normal wafer surfaces, which underwent just an RCA chemical cleaning before oxidation. Atomic force microscopy (AFM) was performed to reveal the topography of the surfaces. Aluminum pads were deposited on these oxidized surfaces using photolithography techniques. The leakage current through the oxide was measured for all three cases. Our results show that the smoother the surface before oxidation, the smaller the leakage current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK7.11
Copyright
Copyright © Materials Research Society 2005

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References

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